dim400dcm17 - a000 igbt chopper module replaces ds5490 - 4 ds5490 - 5 march 2011 (ln 28169 ) caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 1 / 8 www.dynexsemi.com features ? 10s short circuit withstand ? high thermal cycling capability ? non punch through silicon ? isolated alsic base with aln substrates ? lead free c onstruction applications ? high reliability inverters ? motor controllers ? traction drives the powerline ra nge of high power modules includes half bridge, chopper, dual, single and bi - directional switch configurations covering voltages from 600v to 65 00v and currents up to 2400a. the dim 4 00dcm17 - a000 is a 17 00v, n - channel enhancement mode, insulated gate bipol ar transistor (igbt) chopper module. the igbt has a wide reverse bias safe operating area (rbsoa) plus 10s short circuit withstand. this device is optimised for traction drives and other applications requiring high thermal cycling capability. the module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety . ordering information order as: dim 4 00dcm17 - a000 note: when ordering, pl ease use the complete part number key parameters v ces 1700 v v ce(sat) * (typ) 2.7 v i c (max) 4 00 a i c(pk) (max) 8 00 a * measured at the power busbars, not the auxiliary terminals fig. 1 circuit configuration outline type code: d (see fi g. 11 for further information) fig. 2 package 4 x m8 sc re w ing depth m ax 16 sc re w ing depth m ax 8 6 x o 7 130 0. 5 114 0.1 57 0.2 5 57 0.2 5 124 0. 25 140 0. 5 30 0.2 16 0.2 53 0.2 40 0.2 5 0. 2 29.2 0.5 5.25 0. 3 35 0.2 11.5 0.2 14 0.2 55.2 0. 3 11.85 0.2 38 +1.5 -0.0 7 ( c ) 1(e) 3( c ) 5 ( e ) 5 ( e ) 6 ( g ) 2( c ) 4(e) 3 x m4 20 0.1 28 0.5
dim 400dcm17 - a000 2 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd ha ndling procedures. www.dynexsemi.com absolute maximum ratings stresses above those listed under absolute maximum ratings may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentiall y hazardous rupture of the package. appropriate safety precautions should always be followed. exposure to absolute maximum ratings may affect device reliability. t case = 25c unless stated otherwise symbol parameter test conditions max. units v ces coll ector - emitter voltage v ge = 0v 1700 v v ges gate - emitter voltage 20 v i c continuous collector current t case = 75 c 4 00 a i c(pk) peak collector current 1ms, t case = 110 c 8 00 a p max max. transistor power dissipation t case = 25c, t j = 150c 3470 w i 2 t diode i 2 t value (igbt arm) v r = 0, t p = 10ms, t j = 125oc 30 ka 2 s diode i 2 t value (diode arm) 120 ka 2 s v isol isolation voltage C per module commoned terminals to base plate. ac rms, 1 min, 50hz 4000 v q pd partial discharge C per module iec1287, v 1 = 1 8 00v, v 2 = 13 00v, 50hz rms 10 pc thermal and mechanical ratings internal insulation material: aln baseplate material: alsic creepage distance: 20 mm clearance: 10 mm cti (comparative tracking index): 350 symbol parameter test conditions min typ . max units r th(j - c) thermal resistance C C th(j - c) thermal resistance C C C th(c - h) thermal resistance C j junction temperature transistor - - 150 c diode - - 125 c t stg storage temperature range - - 40 - 125 c scre w torque mounting C C C
dim 400dcm17 - a000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 3 / 8 www.dynexsemi.com electrical characteristics t case = 25 c unless stated otherwise. symbol parameter test conditions min typ max units i ces collector cut - off current v ge = 0v, v ce = v ces 1 ma v ge = 0v, v ce = v ces , t case = 125c 12 ma i ges gate leakage current v ge = 20v, v ce = 0v 2 a v ge(th) gate threshold voltage i c = 2 0ma, v ge = v ce 4.5 5.5 6.5 v v ce(sat) ? collector - emitter saturation voltage v ge = 15v, i c = 4 00a 2.7 3.2 v v ge = 15v, i c = 4 00a, t j = 125c 3.4 4.0 v i f diode forward current dc 4 00 a i fm diode maximum forward current t p = 1ms 8 00 a v f ? diode forward voltage (igbt arm) i f = 4 00a 2.2 2.5 v diode forward voltage ( diode arm) 1.8 2.1 v diode forward voltage (igbt arm) i f = 4 00a, t j = 125c 2.3 2.6 v diode forward voltage (diode arm) 1.8 2.1 v c ies input capacitance v ce = 25v, v ge = 0v, f = 1mhz 30 nf q g gate charge 15v 4.5 c c res reverse transfer capacitance v ce = 25v, v ge = 0v, f = 1mhz 2.5 nf l m module inductance C per arm 20 nh r int internal transistor resistance C per arm 270 ? sc data short circuit current, i sc t j = 125c, v cc = 1000v t p 10s, v ge 15v v ce (max) = v ces C l * x di/dt iec 60747 - 9 1600 a note: ? me asured at the power busbars, not the auxiliary terminals * l is the circuit inductance + l m
dim 400dcm17 - a000 4 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com electrical characteristics t case = 25c unless stated otherwise symbol parameter test condit ions min typ. max units t d(off) turn - off delay time i c = 4 00a v ge = 15v v ce = 9 00v r g(on) = 4.7 ? r g(off) = 4.7 ? l s ~ 10 0nh 1150 n s t f fall time 100 ns e off turn - off energy loss 120 mj t d(on) turn - on delay time 250 ns t r rise time 250 ns e on turn - on energy loss 150 mj q rr diode reverse recovery charge igbt arm i f = 400a v ce = 900v di f /dt = 2000a/s 100 c i rr diode reverse recovery current 230 a e rec diode reverse recovery energy 70 mj q rr diode reverse recovery charge dio de arm i f = 400a v ce = 900v di f /dt = 2000a/s 130 c i rr diode reverse recovery current 300 a e rec diode reverse recovery energy 90 mj t case = 125c unless stated otherwise symbol parameter test conditions min typ. max units t d(off) turn - off delay time i c = 400a v ge = 15v v ce = 900v r g(on) = 4.7 ? r g(off) = 4.7 ? l s ~ 100nh 1400 n s t f fall time 130 ns e off turn - off energy loss 180 mj t d(on) turn - on delay time 400 ns t r rise time 250 ns e on turn - on energy loss 170 mj q rr diode reverse recovery charge igbt arm i f = 4 00a v ce = 900v di f /dt = 2 000a/s 170 c i rr diode reverse recovery current 270 a e rec diode reverse recovery energy 100 mj q rr diode reverse recovery charge diode arm i f = 400a v ce = 900v di f /dt = 2000a/s 220 c i rr diode reverse recovery current 350 a e rec diod e reverse recovery energy 130 mj
dim 400dcm17 - a000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 5 / 8 www.dynexsemi.com fig. 3 typical output characteristics fig. 4 typical output characteristics fig. 5 typical switching energy vs collector current fig. 6 typical switching energy vs gate resistance
dim 400dcm17 - a000 6 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com fig. 7 diode typical forward characteristics fig. 8 reverse bias safe operating area fig. 9 diode reverse bias safe operating area fig. 10 transient thermal impedance
dim 400dcm17 - a000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 7 / 8 www.dynexsemi.com package details for further package information, please visit our website or contact customer services. all dimensions in mm, unless stated otherwise. do not scale. nominal weight: 900g module outline type code: d fig. 11 module outline drawing 4 x m8 screwing depth max 16 screwing depth max 8 6 x m4 130 0.5 124 0.25 30 0.2 16 0.2 18 0.2 29.2 0.5 5.25 0.3 14 0.2 57 0.25 57 0.25 114 0.1 40 0.2 44 0.2 53 0.2 57 0.2 11.85 0.2 55.2 0.3 38 +1.5 -0.0 35 0.2 11.5 0.2 7 (c) 1(e) 2(c) 3(c) 4(e) 5 (e) 5 (e) 6 (g) 6 x ? 7 140 0.5
dim 400dcm17 - a000 8 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com important information: this publication is provided for informat ion only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selectio n and ensuring all safety and any warning requirements are met. should additional product information be needed please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccura cies or typographical errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to d ate version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prev ent or mitigate the consequences of a product failure or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may aff ect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current t o flow or high voltage arcing, resulting in fire or explosion. appropriate application design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right han d corner of the front page, to indicate product status if it is not yet fully approved for production. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for vo lume production is in progress. the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all prod ucts and materials are sold and services provided subject to dynexs conditions of sale, which are available on request. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations customer service dynex semiconductor ltd doddington road, lincoln, lincolnshire, ln6 3lf , united kingdom dynex semiconductor ltd doddington road, lincoln, lincolnshire, ln6 3lf, united kingdom fax: +44(0)1522 500550 fax: +44(0)1522 500020 tel: +44(0)1522 500500 tel: +44(0)1522 502753 / 502901 web: http://www.dynexsemi.com email: power_sol utions@dynexsemi.com ? dynex semiconductor ltd. 2001 . technical documentation C not for resale .
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